摘要
介绍了W/Ti合金扩散阻挡层在集成电路布线技术中的作用及应用情况。阐述了W/Ti合金靶材的特性参数-相对密度、微观结构、金属纯度,与W/Ti合金薄膜性能之间的关系,指出高密度、高纯度、富Ti相含量少的合金靶材是制备优良W/Ti合金扩散阻挡层薄膜的基本条件。介绍了制备W/Ti合金靶材的3种方法-真空热压、惰性气体热压、热等静压,并概述了不同方法制备的靶材性能上的差异,给出制备高性能W/Ti合金靶材的工艺条件。
The application of tungsten-titanium diffusion barrier layer in the integrated circuit was presented. The relationship between tungsten-titanium sputtering target characteristics, density, microstructure, metal purity and film performance, was reviewed. Target material with high density, high purity, low content of Ti rich β phase is a fundamental reqirement to produce films with good quality. Hot press and hot isostatic press methods used to fabricate tungsten-tita- nium sputtering targets were introduced. Properties of W-Ti sputter targets made by different methods were summarized.
出处
《稀有金属》
EI
CAS
CSCD
北大核心
2006年第1期95-99,共5页
Chinese Journal of Rare Metals
基金
国家自然科学基金(50501003)资助项目
关键词
溅射靶材
扩散阻挡层
热压
sputtering target
diffusion barrier layers
hot press
