摘要
掺杂元素的Ｌｅｗｉｓ酸强度对掺杂Ｉｎ_２Ｏ_３电性质的影响文世杰Ｇ．Ｃａｍｐｅｔ（ＬａｗｒｅｎｃｅＢｅｒｋｅｌｅｙＬａｂｏｒａｔｏｒｙ，ＢｅｒｋｅｌｅｙＣＡ９４７２０，ＵＳＡ）（ＬａｂｏｒａｔｏｉｒｅｄｅＣｈｅｍｉｅｄｕＳｏｌｉｄｅｄｕＣＮＲＳ，Ｕｎｉ...
This paper discussed the relation between the electronic properties of doped In2O3 and the Lewis acid strength of doping elements. The authors pointed out the key to the choice of appropriate doping elements for improving electric properties of doped In2O3. The carrier concentration and mobility of doped In2O3 increased when Ti4+,Ge4+ and Sn4+ were used as doping elements.
出处
《应用化学》
CAS
CSCD
北大核心
1996年第2期115-116,共2页
Chinese Journal of Applied Chemistry
