摘要
通过PECVD法制备了纳米硅薄膜(nc-Si:H),采用Raman散射谱,AFM对样品的结构和形貌进行了测试,并测试了样品的室温电导率。结果表明:制备出的纳米硅薄膜,其电导率达到4.9S·cm-1。另外制备了本征nc-Si:H膜作缓冲层,结构为ITO/n+-nc-Si:H/i-nc-Si:H/p-c-Si/Ag的PIN型太阳能电池,其Voc达到534.7mV,Isc达到49.24mA(3cm2),填充因子FF为0.4228。
Intrinsic nanocrystalline silicon films （nc-Si：H） were prepared through plasma enhanced chemical vapor deposition （PECVD）. The films＇ structure and surface topography were measured with Raman spectrum and atom force microscope （AFM）, and films＇ room temperature conductivity was tested. The results show that high quality nc-Si：H films are prepared with conductivity of 4.9 S · cm^-1. And PIN solar cell with nc-Si：H film as intrinsic thin-layer is prepared, the solar cell＇s structure is ITO/n^＋-nc-Si：H/i-nc-Si：H/p-c-Si/Ag. The cell＇s performances are measured and its open-circuit voltage Voc is 534.7 mV, short-circuit current Isc is 49.24 mA （3 cm^2） and fill factor is 0.422 8.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2006年第4期47-49,共3页
Electronic Components And Materials
