摘要
控制晶体生长使材料达到最高的强度可以采取两条相反的途径:一是尽量增大位错密度,非晶态材料就可看成是位错密度极高的材料;二是尽量减少位错密度,晶须就是这种方法的一个实例。晶体生长理论研究包括晶体成核理论、输运理论、界面稳定性理论、界面结构理论和界面动力学理论的体系。揭示了晶体生长的基本过程,介绍了晶体生长的机理,概述了晶体生长理论研究的技术和控制晶体生长的途径及手段,阐述晶体生长研究的发展方向,以及晶体生长与界面相的关系。这将对晶体生长的实践起着一定的指导作用。晶体生长理论研究的发展方向是使晶体生长过程可视化,这也是晶体生长实验技术的最终目标。
In order to obtain the highest intensity of material by controlling crystal growth, there are two different and adverse ways. One is to increase the dislocation density of material as much as possible. Non-crystalline material can be regarded as a material of extremely high dislocation density. Another is to decrease the dislocation density of material as much as possible, such as the whisker. Research on the gro.wth mechanism of crystal includes the system of crystal nucleation theory, conveying theory, interface stabilization theory, interface structure theory and interface dynamic theory. In this paper, the growth process of crystal is revealed, the growth mechanism of crystal is introduced, and the technology by which crystal growth theory is studied and the ways and means of controlling crystal growth are summarized. Then the research direction of crystal growth and the relationship between crystal growth and interface phase are set forth. The research direction of crystal growth theory is to visualize the process of crystal growth. It is also the eventual objective of the experimental technology of crystal growth.
出处
《北京石油化工学院学报》
2006年第2期58-64,共7页
Journal of Beijing Institute of Petrochemical Technology
关键词
晶体结构
晶界
晶须
扩散
成核
crystal structure
intergranular
whisker
diffusion
nucleation
