摘要
采用提拉法生长了掺杂浓度分别为4、8与10at％的Tm:YAP晶体．测定了Tm3+在YAP基质中的分凝系数为0．88．采用同步辐射的方法研究了Tm:YAP晶体的生长条纹和结构应力缺陷．晶体的吸收峰位于694和795nm;荧光谱峰值在2．0μm附近,因此Tm:YAP晶体有望成为一种新型的适合LD泵浦的中红外激光材料．
YAP single crystals doped with 4at%, 8at% and 10at% Tm^3＋ ions were grown by the Czochralski method with MF induction heating. The segregation coefficient of Tm^3＋ ion in YAP crystal measured by X-ray fluorescence spectrum technique is about 0.88. Growth striation and structural stress were determined by synchrotron radiation white-beam topography （SRWBT）. The absorption spectrum shows two peaks with wavelength of 694nm and 795nm, and the fluorescence peak is about 2.0μm, which suggest that Tm：YAP is one of the most promising mid-infrared laser crystals.
出处
《无机材料学报》
SCIE
EI
CAS
CSCD
北大核心
2006年第4期838-842,共5页
Journal of Inorganic Materials
关键词
Tm:YAP晶体
提拉法
分凝系数
光谱特性
Tm：YAP crystal
Czochralski method
segregation coefficient
spectral characteristic
