摘要
对MOS结构器件,要分离由辐射效应引起的界面态电荷与氧化层陷阱电荷的方法有很多种,如中电带压法、电荷泵法和双晶体管法就是目前比较常用、有效的方法,分析了这些方法的优点和局限性。
Midgap, CV, charge pumping and dual-transistor charge separation analysis techniques, which can be used to separate the concentrations of radiation-induced oxide-trap and interface-trap charge in MOS transistors, are described in this paper. The principal of charge separation and the advantages and limitations of these methods are analyzed.
出处
《电子产品可靠性与环境试验》
2006年第4期26-29,共4页
Electronic Product Reliability and Environmental Testing
基金
重点基金项目(6140438)
重点实验室基金项目(51433020101DZ1501)
关键词
界面态
氧化层陷阱电荷
电荷分离方法
辐照效应
interface-trap charge
oxide-trap charge
charge separation techniques
irradiation
