摘要
由于Nd3+离子半径0.112nm和Y3+离子半径0.101nm相差10.9%,使得Nd3+离子非常难于进入YAG晶体中。我们用温度梯度法生长了大尺寸高浓度(2.8 at%)的Nd:YAG晶体,同时与用提拉法Nd:GGG晶体进行了比较。分析了高浓度掺杂Nd:GGG和Nd:YAG晶体浓度猝灭问题。研究了不同浓度掺杂的猝灭效应。在同样的掺杂浓度下,我们发现它们的猝灭程度不同,其原因是两种晶体中ΔE(m is-)m和ΔE(m i s+)m不同。
The ionic radius of Y^3＋ is 0. 101nm and of Nd^3＋ is 0.112nm, a difference of about 10.9%. Therefore it is difficult to grow highly doped Nd：YAG. In this paper we have grown Large sized highly doped（2.8at. % ） Nd：YAG crystals by TGT method. Large sized（Ф 〉70mm） high quality Nd：GGG crystals have been grown by CZ method for comparison at the same time. The concentration quenching in Nd：GGG crystals with high Nd^3＋ doping level was demonstrated and studied as well. The comparisons of the concentration quenching effects between the Nd：GGG and Nd：YAG crystals have been listed. The reason why GGG crystal has weaker concentration quenching effect than YAG crystals may be that： YAG crystal has a stronger field strength than that of GGG crystal, which leads to higher values of （-） △Emism（-） and （＋） △Emism（＋） in GGG crystal and this causes weaker concentration quenching effect in Nd：GGG crystal. Key words： Nd： GGG; Nd： YAG： concentration quenchinz, fluorescence lifetime
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2006年第4期757-760,756,共5页
Journal of Synthetic Crystals
