8WU ChaoMin1, SHANG JingZhi1, ZHANG BaoPing1,2, ZHANG JiangYong1,3, YU JinZhong1,3 & WANG QiMing1,31 Department of Physics and Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, China,2 Pen-Tung Sah Micro/Nano Technology Research Center, Xiamen University, Xiamen 361005, China,3 State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.Impact of thickness of GaN buffer layer on properties of AlN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition[J].Science China(Technological Sciences),2010,53(2):313-316. 被引量：2
