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形状参数对MEMS霍尔器件性能影响研究 被引量:1

Study on the Effects of Shape Parameters on MEMS Hall Device Properties
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摘要 利用有限元分析软件ANSYS对长方形和圆形两种霍尔器件的工作状态进行模拟,分析霍尔片(霍尔器件工件区域)结构尺寸与霍尔器件灵敏度的关系,研究形状对器件灵敏度的影响.结果表明:圆形霍尔片灵敏度比长方形霍尔片的高,当圆形霍尔片的半径与厚度比值为15时,灵敏度最高. The working state of circular and quadrate Hall devices is simulated by ANSYS that is a kind of the finite elements analysis software. The effect of the shape of Hall board on the sensitivity is studied by analyzing relation between structural size of Hall board (the active part of Hall device) and sensitivity of Hall device. The simulation results show that the sensitivity of circular Hall board is higher than that of quadrate Hall board, particularly, sensitivity is highest when the ratio of the circular Hall board's radius to the thickness is 15.
出处 《传感技术学报》 CAS CSCD 北大核心 2006年第05B期2054-2056,共3页 Chinese Journal of Sensors and Actuators
关键词 MEMS 有限元法 霍尔器件 器件结构 MEMS finite-element method Hall device device structure
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参考文献11

  • 1Thomas T, Fukang Jet al. Integrated MEMS System for Turbulent Boundary Layer Control [C]//. International Conference on Solid-State Sensors and Actuators,Proceedings, 1997,1:315-318
  • 2Sukhan Lee, Chungwoo Kim, Sunghwan Jung, et al. MEMS for IT Applications,Micromechatronics and Human Sdence [C]//. Proceedings of 2001 International Symposium on 9-12 Sept,2001:17-19
  • 3涂有瑞.半导体磁场传感器过去和未来[J].传感器世界,2003,9(7):1-10. 被引量:16
  • 4Boero G, Demierre M. Micro-Hall devices: Performance,Technologies and Applications[J]. Sensors& Actuators A:Physical, 2003,106:314-320.
  • 5Schurig E, Schott C et. al. 0. 2 mT Residual Offset of CMOS Integrated Vertical Hall Sensors[J]. Sensors & Actuators A:Physical, 2004, 110:98-104
  • 6Roumenin C S. , Nikolov D and Ivanov A. A Novel Parallelfield Hall Sensor with Low Offset and Temperature Drift Based 2D Integrated Magnetometer[J]. Sensors and Actuators A, 2004,115 : 303-307
  • 7Boero G, Utke I, Bret T, et. al. Submicrometer Hall Devices Fabricated by Focused Electron-Beam-Induced Deposition, Applied Physics Letters[J]. 2005(86) :042503-1-042503.3
  • 8Schurig E, Demierre M and Schott C. A Vertical Hall Device in Cmos High-Voltage Technology [C]//. The 11th International Conference on Solid-State Sensors and Actuators, Germany, 2001,7 : 10-14
  • 9赵晓锋,田凤军,温殿忠.采用MEMS制作新型硅磁敏三极管特性研究[J].传感器技术,2004,23(9):86-88. 被引量:3
  • 10Frounchi J , Demierre M, Zoran Randjelovic and Popovic R. Integrated Hall Sensor Array Microsystem[C]//. ISSCC 2001 conference, San Fransisco, USA.

二级参考文献57

  • 1温殿忠,邱成军,庄玉光.P^+πN^+器件压磁电效应的研究[J].传感技术学报,1996,9(2):10-15. 被引量:6
  • 2[4]Wen Dian-zhong.Sensitivity analysis of junction field effect pressure Halltron[J].Reciew of Scientific Instruments,1995,66(1):251-253.
  • 3[5]Johannes W A,Kluge V,Langheinrich W A.An analytical model of MAGFET[J].IEEE Transactions on Electron Device,1999,46(1):89-95.
  • 4S.Kordic. Integrated Silicon magnetic-field sensors[J]. Sensors and Actuators, 10(1986), 347-378.
  • 5Henry P. Baltes et.al. Integrated semiconductor magnetic field sensors[J]. PIEEE, 74(8), 1986, 1107-1132.
  • 6J.E.Lenz . A review magnetic sensors[J], PIEEE, 78(6)1990:973--989.
  • 7J.Heremans. Solid state magnetic field sensors and application[J].Appl.Phys, 26(1993) 1149-1168.
  • 8Ch.S.Roumenin. Magnetic sensors continue to advance towards perfection[J]. Sensors and Actuators, A46-47(1995)273-279.
  • 9R.S.popovic et.al. The future of magnetic sensors [J]. Sensors and Actuators, A56(1996)39-55.
  • 10Y.Ishiai et.al. High accuracy semiconductive magneto-resistive rotational position sensors []]. Automotive Sensors, 97: 0601.

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