摘要
报道了铁酸铋薄膜样品在80K^300K温度范围直流电学输运性质的研究结果.利用同一前驱体不同老化时间,用化学溶液沉积法在钛酸锶衬底上制备出两种样品.在低阻样品中,低场下电流随电压变化遵从欧姆定律,电阻不随温度变化;而在中等强度外场下显示出肖特基二极管性质.在高阻样品中,低场下电流密度沿晶界分布,输运中的势垒能级为0.57eV;高场下电流的传输则遵从Frenkel-Poole模型,相关势垒能级0.12eV.低阻和高阻两种样品在85K温度下可测最大剩余极化分别为2.6μC/cm2和28.8μC/cm2.
DC electrical transport properties of perovskite BiFeO3 thin films were studied in the temperature range from 80K to 300K. The films with high or low resistance on SrTiO3 substrates were prepared by a chemical solution deposition method from the same precursor solution at different aged time. For the low resistance samples, the voltage dependence of current is ohmic and temperature independent at low electric fields. At a medium strength of electric field, it behaves like a typical Schottky diode. For the high resistance samples it is found that electric carriers move along the grain boundaries of the films with an activation energy of 0. 57eV at low electric field while the conduction mechanism can be described with the Frenkel- Poole model with an energy barrier of 0. 12eV at higher electric fields, The measurable maximum values of remnant polarization are 2. 6 μC/cm^2 and 28.8μC/cm^2 at the temperature of 85 K for the two kinds of samples, respectively.
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
2006年第6期401-404,共4页
Journal of Infrared and Millimeter Waves
基金
the National Natural Science Foundation of China(60371040)and The Foundation of Science and Technology Commis-sion of Shanghai Municipality(03JC14076)
关键词
铁电铁磁薄膜
电学输运
铁酸铋薄膜
biferroic film
electrical transportation
bismuth ferrate film
