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极性半导体膜中的束缚极化子(英文) 被引量:2

The Bound Polaron in a Polar Semiconductor Slab
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摘要 采用线性组合算符法和幺正变换方法,研究极性晶体膜中束缚极化子的基态能量、自陷能随膜厚d的变化关系。得出束缚极化子的自陷能由两部分组成:第一部分是由于电子-体LO声子相互作用所引起的(Eetr-LO)极化子效应;第二部分则是电子-SO声子相互作用引起的。后者又包含两部分,分别是电子与极性膜中两支表面声子相互作用的贡献(Eetr-SO( +),Eetr-SO( -))。通过对KCl半导体膜的数值计算表明,Eetr-LO随膜厚d的增加而增加;但是Eetr-SO、极化子的振动频率以及电子-声子相互作用所产生的总自陷能Eetr-ph随膜厚d的增加而减少,当膜厚大于5 nm时,总自陷能Eetr-ph趋于一稳定值。另外,由于束缚势的存在,使极化子的振动频率增大,这主要是由于束缚势的存在,使电子-声子间的相互作用增强,极化子效应增大而引起的。 Taking into account the interaction of an electron with bulk longitudinal-optical (LO) and surface longitudinal-optical (SO) phonons, we study the ground state energy and self-trapping energy of the bound polaron in a polar slab by using the Huybrecht's linear combination operator method. The ground state energy and the self-trapping energy are all derived as function of slab thickness. E^tr e-ph includes two parts, one is E^tr e-LO, the other is E^tre-SO, and E^tre-SO also includes two parts, E^tre-SO ( + ) and E^tre-SO ( - ) ; taking KCI as an example, E^tre-LO increases with the increase of the slab thickness, but E^tre-SO ,E^tre-ph and A all reduce with the increase of the slab thickness, and when the slab thickness d is more than 5 nm, E^tre-ph is about to a stable number. Especially, vibration frequency ( A ) increases when there is the Coulomb potential, because of the interactions are strengthened between the electrons and phonons.
出处 《发光学报》 EI CAS CSCD 北大核心 2006年第6期843-848,共6页 Chinese Journal of Luminescence
基金 国家自然科学基金资助项目(10347004)~~
关键词 极性晶体膜 束缚极化子 线性组合算符 自陷能 polar crystal slab bound polaron Huybrecht's linear combination operator self-trapping energy
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参考文献18

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二级参考文献26

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共引文献29

同被引文献13

  • 1Licari J J, Evrand R. Electron-phonons interaction in a dielectric slab : effects of the electronic polarizability [ J ]. Phys. Rev. B, 1977, 15(4) :2254-2264.
  • 2Licari J J. Polaron self-energy in a dielectric slab [J]. Solid State Commun. , 1979, 29(8) :625-628.
  • 3Sherman A V. Dependence of the polaron binding energy and effective mass in a crystal layer on its thickness [ J ]. Solid State Commun. , 1981, 39(2) :273-277.
  • 4Hawton M H, Paranjape V V. Polaron in thin slab [J]. J. Phys. Soc. Jpn. , 1983, 52(10) :3563-3570.
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