摘要
本文主要研究了制备参数和退火对ａ－Ｃ：Ｈ膜的光学性质的影响．得到了样品的吸收系数、光学带隙和带尾宽度等反映ａ－Ｃ：Ｈ膜电子能带结构的物理参数．结果表明，吸收系数随着衬底温度、射频偏压增加而上升，随反应室压强的升高而下降；光学带隙随衬底温度、射频偏压增加而下降，随反应室任强的升高而变宽随着退火温度Ｔａ的升高，氢含量减少，带尾变宽，带隙变窄．
Abstract Effects of deposit parameters and annealing on the optical properties of a-C:H films are determined. The absorption coefficients, optical energy gap and band tail widths are obtained. The results show that the absorption coefficient increases with increasing substrate temperature and r. f. bias voltage, decreases with incrensing prassurel Incraasing thermal annealing temperature Ta, reduces the hydrogen content, lowers the anergy gap and increases the absorption tail width.
基金
北京市自然科学基金
