摘要
根据JKR接触理论,推导出晶片直接键合时晶片接触表面粗糙度需要满足的条件,其中晶片接触表面粗糙度的描述是基于缝隙长度和缝隙高度的正弦波模型.分析结果表明,晶片直接键合的条件与无量纲参数α有关.以硅片键合为例,根据参数α可以把硅片键合分为三种类型硅片直接键合(α>1.065);在外压力作用下键合(0.57<α<1.065)和有空洞产生的键合(α<0.57).实验数据与理论结果吻合得很好.
The criterion of microroughness for self-propagating wafer bonding is studied according to JKR contact theory, where the microroughness model is based on a sinusoidal distribution for gap height and gap length. Our analysis shows that the criterion for self-propagating wafer bonding is relevant to the dimensionless parameter. In silicon wafer bonding, using the dimensionless parameter as a measure, three regions of silicon wafer bonding can be identified：self-propagating silicon wafer bonding （α〉1. 065）,external pressure assisted silicon wafer bonding （0.57〈α〈1. 065）, and silicon wafer bonding with voids （α〈0. 57）. Experimental data are in reasonable agreement with this theory.
基金
国家重点基础研究发展规划(批准号:2003CB716207)
国家自然科学基金(批准号:50405033)资助项目
关键词
直接键合
微观粗糙度
JKR接触理论
self-propagating wafer bonding
microroughness
JKR contact theory
