摘要
介绍了采用0．35μmCMOS工艺实现的单边带上变频混频电路。该混频电路可用于低中频直接混频的PCS1900（1850～1910MHz）发射器系统中。电路采用了multi—tanh线性化技术．可以得到较高的线性度。在单电源＋3．3V下，上混频器电流约为6mA。从上混频电路输出级测得ⅡP3约8dBm，IP1dB压缩点约为0dBm。
This paper presents a single side band up-mixer fabricated by SMIC 0. 35 μm CMOS technology. It can be used in low-IF direct conversion PCS1900 （1850- 1910 MHz） transceiver system. The mixer is based on multi-tanh linearization technique and achieves high linearity. It operates at a single power supply of 3.3 V and consumes less than 6 mA. The upmixer with the output buffer achieves an ⅡP3 of 8 dBm and an input P1dB gain compression point of 0 dBm.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2007年第1期49-53,68,共6页
Research & Progress of SSE
