摘要
用化学共沉淀和热处理法于pH11.5～12.5时,用(NH4)2CO3作沉淀剂,制备了Zn2+掺杂的In2O3微粉。研究了Zn2+掺杂量对In2O3气敏元件电导和气敏性能的影响。结果发现,ZnO与In2O3可形成有限固溶体In2-xZnxO3(0≤x≤0.10);In1.95Zn0.05O3气敏元件在223℃工作温度下,对浓度为4.5×10–7mol/L的C2H5OH的灵敏度高达174.4,且选择性也好。
The effect of Zn^2＋ doping amount on the conductance and gas-sensing properties of In2O3 was investigated. The Zn^2＋ doped In2O3 powder was prepared by chemical coprecipitation and heat-treated method. The results indicate that solid solution In2jZnxO3 （0≤x≤0.10） can be formed by ZnO and In2O3; In1.95Zn0.05O3 gas sensor has a high sensitivity （174.4） and selectivity to 4.5×10^-7 mol/L C2H5OH at 223℃.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2007年第4期31-33,共3页
Electronic Components And Materials
基金
安徽省教育厅自然科学基金资助项目(2006kj122B)
