摘要
采用了等离子体增强化学气相沉积法(plas-ma-enhanced chemical vapor deposition,PECVD)在聚酰亚胺(polyimide,PI)牺牲层上生长氮化硅薄膜,讨论沉积温度、射频功率、反应气体流量比等工艺参数对氮化硅薄膜的生长速率、氮硅比、残余应力等性能的影响,得到适合制作接触式射频MEMS开关中悬梁的氮化硅薄膜的最佳工艺条件。
The silicon nitride thin films are deposited on polyimide sacrificial layer by PECVD. The influence of the process parameters such as temperature,power,the ratio flux of reactant on the residual stress and other characteristics of silicon nitride thin films are discussed. The optimum process condition is obtained,and the silicon nitride thin films deposited by the process condition have been successfully applied in RF MEMS switch.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2007年第5期703-705,710,共4页
Journal of Functional Materials
基金
国家基金青年基金资助项目(60301006)
福建省自然科学基金资助项目(A0310012)
