期刊文献+

甲烷浓度对CVD金刚石薄膜晶体学生长过程的影响 被引量:10

Influence of Methane Concentration on Crystal Growing Process in CVD Free Standing Diamond Films
在线阅读 下载PDF
导出
摘要 采用X射线衍射技术、电子背散射衍射技术和扫描电镜分别观察了不同甲烷浓度条件下沉积的CVD自支撑金刚石薄膜的宏观织构、微区晶界分布和表面形貌.研究了金刚石晶体{100}面和{111}面生长的晶体学过程.研究表明,{100}面通过吸附活性基团CH2 2-,而{111}面通过交替吸附活性基团CH3 -和CH3-后脱氢堆积碳原子.低甲烷浓度时,{111}面表面能低于{100}面,使{111}面生长略快于{100}面.甲烷浓度升高,动力学作用增强使{100}面生长明显快于{111}面,使金刚石薄膜产生{100}纤维织构;同时显露的{100}面平行于薄膜表面,竞争生长使位于晶体侧面的{111}面由于相互覆盖而减小,形成了不同于单晶体自由生长的薄膜表面形貌组织. The Macro-texture, grain boundary distribution and surface morphlolgy in CVD free standing diamond films deposited with different methane concentrations were observed by X ray diffraction technology, electron backscatter diffraction and SEM. The crystal growing process of {100} and {111} planes in diamond crystal was studied. It is shown that diamond films adsorb activated radical CH^2- 2on {100} plane or adsorb CH^- 3 and CH^3- on {111} plane alternately. Carbon atoms stack on the film surface during dehydrogenation. At low methane concentration, the expansion ratio of { 111} planes is close to, but faster than that of { 100} planes because of their relative lower surface energy. The enhanced driving force induced by the increased methane concentration results in faster growth of {100} plane than that of {111} plane, which promotes the formation of (100} texture. The film surface morphology consisits of the exposured {100} planes that are parallel to the film surface and the exposured {111} planes area as the side surface that decrease during the competition growth, which is different from that of single crystal growth.
出处 《无机材料学报》 SCIE EI CAS CSCD 北大核心 2007年第3期570-576,共7页 Journal of Inorganic Materials
基金 国家自然科学基金(50372007)
关键词 金刚石薄膜 织构 晶体生长 表面形貌组织 diamond film texture crystalgrowing surface structure
  • 相关文献

参考文献20

  • 1林良武,唐元洪,朱利兵.原子氢在纳米金刚石薄膜生长中的作用[J].无机材料学报,2005,20(5):1263-1269. 被引量:4
  • 2Yan C S,Yogesh K,Vohra M N.Diamond and Related Materials,1998,8 (12):2022-2031.
  • 3Hollman P,Alahelisten A,Olsson M.Thin Solid Films,1995,270 (1):137-142.
  • 4Shang N G,Lee C.Diamond and Related Materials,2000,9 (8):1388-1392.
  • 5YU Z,Flodstrom A.Diamond and Related Materials,1997,6 (1):81-84.
  • 6Bühler J,Prior Y.Journal of Crystal Growth,2000,209(4):779-788.
  • 7Kuang Y,Badzian A,Tsong T,et al.Thin Solid Films,1996,272 (1):49-51.
  • 8Sun H,Yu S,jiang Z,et al.Diamond and Related Materials,1996,5 (11):1308-1312.
  • 9Yu Z,Karlsson U,Flodstron A.Thin Solid Films,1999,142 (1):74-82.
  • 10Lü F X,Tang W Z,Huang T B,et al,Diamond and Related Materials,2001,10 (9):1551-1556.

二级参考文献22

  • 1Telling R H,Field J E.Diamond and Related Materials,1999,8:850-854.
  • 2Sumiya H,Satoh S,Toda N.Diamond and Related Materials,1997,6:1841-1846.
  • 3Uddin S,Seah K H W,Li X O,et al.Wear,2004,257:751-759.
  • 4Geis M W.Appl.Phys.Lett,1989,55:550-552.
  • 5Locher R,Wagner J,Fuchs F,et al.Diamond and Related Materials,1995,4:678-683.
  • 6Menon P M,Clausing R E,Heatherly L,et al.Diamond and Related Materials,1998,7:1201-1206.
  • 7Choi S J,Shin Y S.Applications of Diamond Films and Related Materials,New York:Elsevier Science Publishers,1991.527-531.
  • 8Klein C.Materials Research Bulletin,1992,27 (12):1407-1414.
  • 9Hessner R,Schreck M,Geier S,et al.Diamond and Related Materials,1995,4:405-410.
  • 10Jiang X,Paul M,Klages C P.Diamond and Related Materials,1996,5:251-255.

共引文献12

同被引文献114

引证文献10

二级引证文献10

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部