摘要
由于直流条件下不存在相位参数φ,采用基于Matlab软件的单脉冲触发方式的数据采集分析系统,通过引入Δt参数替代相位参数φ,从而对四种典型缺陷试样的局部放电信号分别建立了q、n、Δt分布谱图。经过对比分析,能看到四种缺陷电容器的局部放电信号分布谱图有较明显的差异,为深入分析理解电容器的局部放电,对电容器的各种缺陷类型进行模式识别提供了数据依据。
Under DC there does not exist fundamental parameter φ, so a new parameter △t is introduced. Adopting data acquisition and analysis system with single shot trigger based on Matlab software, PD under DC condition is obtained in four typical defect models. DCPD signal data were analyzed through q, n, △t distribution figures, which obtains obvious difference. All results provide data foundation for pattern recognition of high-voltage storage capacitors.
出处
《电气应用》
北大核心
2007年第7期58-62,共5页
Electrotechnical Application
基金
国家自然科学基金资助项目(10476022)
