摘要
用ＧＳＭＢＥ方法生长出了高质量的具有不同阱宽（ｌ～１１ｎｍ）的Ｉｎ０．６３Ｇａ０．３７Ａｓ／ＩｎＰ压应变量子阱结构材料．通过双晶Ｘ射线衍射测量及计算机模拟确定了阱层中的Ｉｎ组份．对材料进行了低温光致发光谱测试，确定了压应变量子阱中的激子跃迁能量．半高宽数值表明，量子阱界面具有原子级的平整度．与７ｎｍ和９ｎｍ阱所对应的低温光致发光谱峰的半高宽为４．５ｍｅＶ．
High quality compressively strained quantum wells with different well widths (1￣11nm) were grown for the first time in China using the home made GSMBE system. By means of double crystal X ray diffraction measurement and its computer simulation, the indium composition in the wells of the sample was determined.Sharp and intense peaks for each well can be well resolved in the 10K PL spectra. For wells narrower than 4nm, the line widths of the peaks are smaller than the theoretical values of line width broadening due to one monolayer interface fluctuation, showing that the interface fluctuation of the sample is within one monolayer. For wells of 7nm and 9nm,the peak widths are as low as 4.5 meV.
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
1997年第1期1-6,共6页
Journal of Infrared and Millimeter Waves
基金
863高技术基金
关键词
分子束外延
量子阱
光致发光
镓砷铟
磷化铟
molecular beam epitaxy,In x Ga 1-x As/InP,quantum wells, photoluminescence.
