摘要
用７５、１００和１５０ｋｅＶ的氮离子及２０ｋｅＶ的氮、氢和氩离子的不同剂量注入水稻种子，以γ射线作对比，研究其细胞学效应和诱变效应。结果表明，Ｎ＋、Ｈ＋、Ａｒ＋均能诱发多种类型的染色体畸变，其畸变细胞率随离子注入能量和剂量的增加而提高，但染色体畸变效应低于γ辐照。
After implanting 75,100 and 150 keV of N + ion and 20 keV of N +, H + and Ar + ions of various doses to rice seeds, the cytological (in M 1) and mutagenic (in M 2) effects were studied. The results indicated that all the methods could induce the variation of the chromosome structure in rice plant. The rate of cells with chromosomal aberration tended to increase with the ion implanting energy and dose. However, the rate of cells with chromosomal aberration was lower than that induced with 60 Co γ rays. Frequency of the chlorophyll mutation and useful mutation induced by implantation of N +, H + and Ar + ions were higher than those induced by γ rays.
出处
《核农学报》
CAS
CSCD
1997年第1期15-20,共6页
Journal of Nuclear Agricultural Sciences
基金
农业部和省科委资助
关键词
离子注入
细胞学效应
水稻
诱变育种
Ion implantation. cytological effect in M 1, mutation in M 2, rice plant
