摘要
在国产CBE设备上，用GSMBE方法首次在国内成功地生长出了具有不同阱宽（1～18nm）的高质量的In0.53Ga0.47As／InP匹配量子阱结构材料，低温光致发光谱测试结果表明：量子阱材料发光谱峰强且锐，每个阱的激子跃迁峰清晰可辨．当阱宽大于6nm时，阱中激子跃迁能量的实验值与理论计算值符合得很好；当阱宽小于6nm时，实验值小于理论值；对阱宽相同的窄阱而言，我们样品的实验值高于Tsang的实验值，当阱宽小于4nm时，阱中激子跃迁谱峰的半高宽小于当量子阱界面起伏一个分子单层时所引起的展宽值，表明量子阱的界面具有原子级的平整度；与1nm阱相应的低温光致发光峰的半高宽为21．6meV；7nm阱对应的PL谱峰的半高宽为5．9meV．
By using a home-made GSMBE system, high quality In0.53Ga0.47As/InP quantum wells having different well widths (1~18nm) and lattice-matched to (001) InP substrate have been achieved for the first time in China. Sharp and intense photoluminescence (PL)peaks for each well can well resolved in the 10K PL spectra. For wells larger than^6nm, the exciton energies are in good agreement with those of calculation. For wells narrower than 4nm, our line widths at 10K are bellow the theoretical values of line width broadening due to one monolayer interface fluctuation, showing that the interface fluctuation of our sample is within one monolayer.
基金
国家"863"高技术计划资助
