摘要
以微机电系统常用的单晶硅材料和经氮离子注入单晶硅后形成的表面改性层为研究对象,在原位纳米力学测试系统上进行微压痕实验,对样品的表面纳米硬度进行了测试。同时,还通过该仪器的原子力成像功能对实验区域扫描成像,在纳米尺度下观察和分析形貌。结果表明:单晶硅在氮离子注入前后的纳米硬度值与载荷有很大关系。通过对微压痕和原子力图像的分析,表明单晶硅在氮离子注入后的纳米硬度值有所降低,其主要原因是氮离子注入后导致晶格抵抗变形的能力降低。
Single crystal silicon which is commonly applied for MEMS and its modified layers formed by N ^＋ -implantation were studied. Nanoindentation test was performed on TriboIndenter, a full featured nanomechanical test instrument. The nanohardness of samples surface was measured. The tested areas were observed by atom force microscope of this apparatus. The morphology was analyzed under nanoscale. The result shows that the nanohardness has greatly relation to the loads before and after N ^＋ -implantation of single crystal silicon. The result by analyzing nanoindentation and atom force images indicates that the nanohardness is decreased after N^＋ -implanted single crystal silicon. This is mainly because after N ^＋ -implanted, the distortion resistance of crystal lattice is decreased.
出处
《润滑与密封》
CAS
CSCD
北大核心
2007年第3期73-75,87,共4页
Lubrication Engineering
基金
国家自然科学基金项目(50405042)
关键词
单晶硅
离子注入
纳米硬度
single crystal silicon
ion-implantation
nanohardness
