摘要
与传统的带隙基准电路完全使用p-n结达到高次温度补偿不同，提出利用标准CMOS工艺下不同电阻的不同温度系数，实现温度的高次补偿，大大减小了电路的复杂性和功耗。同时，通过增加电源电压耦合电路，提高电源抑制比，并在输出级利用低压差电压DC转换电路，实现电压转换，提供可调的多种参考电压。该电路采用Chartered0．35μmCMOS工艺实现，采用3．3V电源电压，在-40～100℃范围内，达到低于6ppm／℃的温度系数，在1kHz和27℃下，电源抑制比达到82dB。
Unlike traditional circuits using p-n junction to realize temperature compensation, this higher-order temperature compensation bandgap voltage reference design utilizes a temperatunydependent resistor ratio generated by a highly-resistive poly resistor and a diffusion resistor, which greatly reduces circuit complexity and power dissipation. Besides, the power supply rejection ratio （PSRR） of the proposed circuit is improved by adding a simple voltage subtraction circuit. A low dropout （LDO） output stage is used as a buffer to provide different reference voltages. Implemented in a standard 0. 35μm CMOS technology （Chartered Semiconductor） and operated at 3. 3 V, this circuit has a temperature coefficient below 6 ppm/℃ and a PSRR over 82 dB at 1 kHz and 27 ℃.
出处
《微电子学》
CAS
CSCD
北大核心
2008年第2期192-196,200,共6页
Microelectronics
关键词
带隙基准源
电压基准源
电源抑制比
温度补偿
Bandgap reference source
Voltage reference source
PSRR
Temperature compensation
