摘要
用高分辨率多晶多反射X射线衍射仪进行衍射空间的二维扫描是目前非损伤性表征半导体材料质量的手段之一．不同质量的材料在二维衍射空间中的衍射图形状不同．本文以GaAS／AlGaAs为例，展示了如何利用X射线的二维衍射空间图的形状来定性地分析半导体单晶样品的宏观弯曲、微观倾斜、组分梯度、应变、弛豫以及平行于界面的连续性等问题．所得结果同样适用于其它半导体材料．
High resolution multiple-crystal multiple-reflection X-ray diffractometer has been used to record reciprocal space maps of semiconductors. ixfferent mapping shapes correspond to different crystal quality. For GaAs/AlGaAs materials, macro curvature, micro tilt, gradient of composition,strain,relax and continuity parallel to interface have been shown qualitatively. The results can also fit for other semicondutor materials.
出处
《光子学报》
EI
CAS
CSCD
1997年第11期1003-1006,共4页
Acta Photonica Sinica
