摘要
Single event transient of a real p-n junction in a 0.18μm bulk process is studied by 3D TCAD simulation. The impact of voltage, temperature, substrate concentration, and LET on SET is studied. Our simulation results demonstrate that biases in the range 1.62 to 1.98V influence DSET current shape greatly and total collected charge weakly. Peak current and charge collection within 2ns decreases as temperature increases,and temperature has a stronger influence on SET currents than on total charge. Typical variation of substrate concentration in modern VDSM processes has a negligible effect on SEEs. Both peak current and total collection charge increases as LET increases.
采用三维TCAD模拟的手段,针对0.18μm工艺下的真实p-n结,研究了偏压、温度、衬底掺杂浓度和LET对辐射诱导的SET电流脉冲的影响.研究结果表明,在1.62-1.98V的范围内,偏压对电流脉冲的形状有明显影响,而对2ns内的电荷收集总量几乎没有影响;电流脉冲峰值和2ns内的电荷收集总量均随着温度的增加而降低,但温度对电流脉冲峰值的影响更大,而对电荷收集总量的影响相对较小;在典型的现代工艺条件下,衬底掺杂浓度的起伏对单粒子加固性能的影响基本可以忽略;电流脉冲的峰值和电荷收集量二者均随着LET的增加而增加.
