摘要
用微波等离子体化学气相沉积法同质外延生长了有缺陷的金刚石颗粒。在同质外延之前,研究了温度因素对金刚石生长表面形貌的影响,研究表明适宜金刚石同质外延的温度范围非常窄,在1030℃左右;温度低于920℃,大尺寸的金刚石单晶颗粒就很难得到,二次形核现象变的很严重。在实验得出的优化温度条件下,对表面有缺陷的天然金刚石进行了同质外延生长,用扫描电子显微镜(SEM)观察发现,原来金刚石表面的裂缝被修复,外延生长速率达到10.3μm/h。
A study of the homoepitaxial growth of flawed diamond using high-power microwave-plasma enhanced chemical vapor deposition （MPCVD） system has been carried out. Prior to the homoepitaxial growth, the morphology of diamond film which was affected by the temperature was studied. The results showed that the temperature of homoepitaxial diamond was rigorous, and the temperature range suitable for epitaxial growth of single crystal diamond was small, around 1030 ℃. If the temperature was lower than 920 ℃, the single crystal diamond was hard to be received and the secondary nucleation is more obvious. Under the optimum temperature condition, a nature diamond with flaw on its surface was uesed to be homoepitaxial growth. The surface morphology of the grown diamond was examined by scanning electron microscopy （SEM）. It was found that the crack has been repaired, and the growth speed was about 10.3 μm/h.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2008年第5期1157-1161,共5页
Journal of Synthetic Crystals
基金
湖北省高等学校优秀中青年科技创新团队资助项目(2004)
湖北省教育厅项目(Q20081505)
湖北省新型反应器与绿色化学工艺重点实验室资助课题(RGGT200801)
