摘要
概述了近年来关于氧化镁磁隧道结磁电阻效应的最新研究进展,介绍了势垒层厚度、偏压、温度以及微结构等因素对磁电阻效应的影响。氧化镁磁隧道结的磁电阻效应与铁磁电极层和势垒层间的界面化学态与磁状态密切相关,势垒层厚度、偏压和温度等对磁电阻效应的影响关系表现出与传统氧化铝磁隧道结不同的变化特点。根据氧化镁磁隧道结磁电阻效应的研究状况,对其将来的发展进行了展望。
The latest progresses of study on the magnetoresistance effect of MgO magnetic tunneling junctions are reported. The effects of the barrier thickness, bias voltage, temperature and microstructure on the magnetoresistanee effect are discussed. The magnetoresistance effect of MgO magnetic tunneling junctions is closely related to the chemical and magnetic states of the interface between the ferromagnetic electrode and the barrier. The behavior of the magnetoresistanee effect of MgO magnetic turmeling junctions is different with that of the Al2O3 magnetic tunneling junctions. The prospect for the future study is presented in the end of the paper.
出处
《材料导报》
EI
CAS
CSCD
北大核心
2008年第12期23-25,共3页
Materials Reports
基金
甘肃省自然科学基金资助项目(3YS061-A25-011)
兰州大学青年教师资助计划
关键词
氧化镁
磁隧道结
磁电阻效应
magnesium oxide, magnetic tunneling junction, magnetoresistance effect
