期刊文献+
任意字段
题名或关键词
题名
关键词
文摘
作者
第一作者
机构
刊名
分类号
参考文献
作者简介
基金资助
栏目信息

基于RT器件的数据选择器和D锁存器设计 被引量：4

Design of MUX and D Flip-latch Using RT Devices
在线阅读 下载PDF
导出
摘要 以共振隧穿二极管(resonant tunneling diode)和三端共振隧穿器件RTD/HEMT为基本单元,设计了一个全新的1-of-2数据选择器,并以该数据选择器为核心电路,实现了基于RT器件的D锁存器,SPICE仿真结果验证了设计的正确性,为利用RT器件设计时序电路提供了一个简单有效的设计方法。本文所设计的电路具有量子器件的低功耗、高速等优点。 A novel 1-of-2 MUX is designed using resonant tunneling diode （RTD） and RTD/ HEMT. A D flip-latch circuit is also designed focusing on the MUX. The simulation results prove the correction of these circuits. It offers a simple and effective way to design flip-flop circuits based on resonant tunneling devices, and all these circuits are characterized of the low power, high speed virtues due to the quantum devices.
作者 林弥 张海鹏 吕伟锋 孙玲玲
机构地区 浙江大学信息与电子工程学系 杭州电子科技大学电子信息学院
出处 《科技通报》 北大核心 2009年第1期89-92,共4页 Bulletin of Science and Technology
关键词 RT器件 数据选择器 D锁存器 RT devices MUX D flip-latch
分类号 TN312.2 [电子电信—物理电子学] TN402 [电子电信—微电子学与固体电子学]
  • 相关文献

参考文献15

  • 1Maezawa,K. Resonant tunneling diodes and their application to high-speed circuits [C]//IEEE Compound Semiconductor Integrated Circuit. CA:United States. 2005.97-100.
  • 2Li Sing-rong, Mazumder P, Chua Leon-o. On the implementation of RTD based CNNS [C]//Proceedings of the 2004 International Symposium of Circuits and Systems. Vancouver : Canada.2004.23-26.
  • 3Avedillo M J,Quitana J M,Pettenghi H. Self-latching operation of MOBILE circuits using series-connection of RTDs and transistors [J ]. IEEE Transactions on Circuits and Systems, 2006,53 (5) : 334-338.
  • 4Choi S,Lee B, Kim T,et al. CML-type Monostable Bistable logic Element (MOBILE) using InP-based monolithic RTD/HBT technology [J]. Electronics Letters, 2004,40 (13) : 792-793.
  • 5王占国.纳米半导体材料及其纳米器件研究进展[J].半导体技术,2001,26(3):13-16. 被引量：10
  • 6Sen S,Capasso F,Cho A,et al. Resonant tunneling device signal processing applications with reduced circuit complexity [J]. IEEE of Electron Devices,1987,34: 2185-2191.
  • 7Potter R C,Lakhani A,Hier H. Three and six logic states by the vertical integration of InAlAs/InGaAs resonant tunneling structures [J]. Appl Phys,1990,64: 3735-3736.
  • 8Bhattacharya M ,Kulkarni S,Gonzalez A ,et al. A prototyping technique for large-scale RTD-CMOS circuits [C ]//Proceedings of IEEE 2000 international symposium on Circuits and Systems. Geneva:Switz,2000.635-638.
  • 9Maznmder P, Kulkarni S, Bhattacharya M,et al. Digital circuit applications of resonant tunneling devices [J]. Proceedings of IEEE, 2000,86 (4) : 664-686.
  • 10Chen K, Akeyoshi T, Maezawa K. Reset-set flipflop based on a novel approach of modulating resonant-tunneling current with FET gates [J]. Electronics Letters, 1994,30(21 ) : 1805-1806.

二级参考文献20

  • 1何小艇.数字电路[M].杭州:浙江大学出版社,2000.16-25.
  • 2Yuminaka Y,Morishita T,Aoki T,et al. Mulitiple-Valued Data Recovery Techniques for Band-Limited Channels in VLSI.Proceedings of 32nd IEEE International symposium on ISMVL,Boston,2002..
  • 3Prost W,Auer U,Tegude F J,et al. Tunnelling Diode Technology.Proceedings of 31st IEEE International symposiumm ISMVL,Warsaw,2001.
  • 4Bhattacharya M,Kulkarni S,Gonzalez A,et al.A Prototyping Technique for Large-scale RTD-CMOS circuits.Proceedings of IEEE international symposium on Circuits and Systems,Geneva,2000.
  • 5Waho T,Chen K J,Yamamoto M. Resonant-tunneling diode and HEMT logic circuits with multiple thresholds and multilevel output[J]. IEEE Journal of Solid-State Circuits,1998,33:268-274.
  • 6Mazumder P, Kulkarni S, Bhattacharya M,et al. Digital circuit applications of resonant tunneling devices[J]. Proceeding of the IEEE,1998,86(4):664-686.
  • 7Yamamoto M,Matsuzaki H,Itoh T,et al. Ultrahigh-speed Circuits Using Resonant Tunneling Devices[J]. Proceedings of VLSI. 1999,3:150-153.
  • 8Maezawa K, Matsuzaki H,Arai K,et al. High-speed operation of a resonant tunneling flip-flop circuit employing a MOBILE (monostable-bistable transistion logic element)[J]. Device Research Conference Digest,1997,55:94-95.
  • 9Maezawa K,Akeyoshi T,Mizutani T. Functions and applications of monostable-bistable transition logic elements (MOBILEs) having multiple-input terminals[J]. IEEE Trans on Electron Devices,1994 41(2):148-154.
  • 10Maezawa K,Matsuzaki H,Arai K,et al.High-speed operation of a resonant tunneling flip-flop circuit employing a MOBILE (monostable-bistable transistion logic element).Device Research Conference Digest,1997,55:94

共引文献15

同被引文献41

引证文献4

二级引证文献5

科技通报
2009年 第1期

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部