摘要
随着半导体芯片的特征尺寸从微米量级向纳米量级挺进,半导体的量子效应现象显现。文章阐述了半导体器件中的量子尺寸效应、隧道效应、干涉效应等量子效应的种类以及利用这些量子效应制作的量子点器件、谐振隧穿器件和单电子器件三大种类量子电子器件。介绍了各类量子电子器件的原理以及它们具有超高速、超高频、高集成度、低功耗和高特征温度等优越特性,并着重介绍了各类量子电子器件的制造方法。在此基础上,指出了量子电子器件的应用及发展前景。
The semiconductor＇s quanta effects appear in pace with feature size of semiconductor wafer from micron to nanometer .The semiconductor＇s quanta effects as quanta size effect, tunnel effect and quanta interference effect are described in this paper. Three sorts of semiconductor quanta devices as quantum dot device, resonance tunnel effect device, single electronic device are described in this paper. The theory and excellent characteristics as super high speed, super high frequency, high integration density, low power and high feature temperature are included. The fabrications of semiconductor quanta devices are included. The applications and future of semiconductor quanta devices are also demonstrated.
出处
《电子与封装》
2008年第12期31-35,共5页
Electronics & Packaging
关键词
量子效应
量子器件
制造方法
应用
quanta effect
quanta devices
fabrication way
application
