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ZnO基稀磁半导体纳米薄膜材料的研究进展

Recent progress in research on ZnO based nanothin films of diluted magnetic semiconductor
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摘要 目的综述ZnO基稀磁半导体(DMS)纳米薄膜材料的研究进展概况,揭示本研究领域存在的某些问题,并在此基础上分析其发展前景。方法参考58篇相关文献,对其结构和掺杂体系进行总结和比较。结果从ZnO基DMS纳米薄膜材料的制备方法、掺杂其它元素两方面进行了综述,并指出了目前研究中存在的问题,即难以合成出高质量均匀掺杂的样品;磁性来源问题尚未形成统一的定论;探求影响磁学性质的本质的微观因素需要深入研究,以及制备样品的重复率不高。结论具有室温铁磁性的DMS是自旋电子学应用的基础,它是利用载流子的自旋和电荷自由度构造将磁、电集于一体的半导体器件。其研究虽有长足发展,但是要制备出比较理想的ZnO基DMS纳米薄膜材料的技术目前看来还不够成熟,依然需要深入研究。 Aim Recent progress in research on ZnO based nanometer thin film materials of dilu- ted magnetic semiconductor was reviewed to reveal some problems existing in the research and analyse its prospect on this basis. Methods Based on 58 related literatures, the structure and doping system of ZnO based nanometer thin film materials of diluted magnetic semiconductor was summarized and compared. Result It was pointed out that the problems existed in the research from such aspects as the method for preparation of the ZnO based nanometer thin film materials of diluted magnetic semiconductor and other doping elements. Namely, 1) it was difficult to synthetise high-quality uniform doped samples; 2) there was not a unified final conclusion about source of magnetic properties; 3) the microcosmic factors need further study which influence the essence of magnetic property; 4) the repetition rates of the prepared samples were not high. Conclusion The diluted magnetic semiconductors with room-temperature ferromagnetism, which are magnetic and electronic devices that can utilize simultaneously the spin of carrier and degrees of freedom of charge, are the basis of the spintronics application. Although the research has made considerable development, the technology for preparing ZnO based nanometer thin film materials of diluted magnetic semiconductor is far from maturity and needs to be studied further.
出处 《宝鸡文理学院学报(自然科学版)》 CAS 2009年第1期45-50,共6页 Journal of Baoji University of Arts and Sciences(Natural Science Edition)
关键词 稀磁半导体 ZNO 研究进展 diluted magnetic semiconductor ZnO research progress
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