摘要
采用直流磁控溅射法在PI柔性衬底上制备Cu膜。通过接触角测试仪、X射线衍射仪、四探针测试仪等仪器研究了Ar+轰击时间和溅射功率对薄膜接触角、择优取向、晶粒大小及电阻率的影响。测试结果表明:随着Ar+轰击时间的延长,接触角减小,轰击时间为3min时,接触角达到最小为45.0°,进一步延长Ar+轰击时间反而会导致接触角增大。Ar+轰击时间由1min增加到3min时,平均晶粒尺寸由16.6nm增加到22.9nm,电阻率从16.2μΩ·cm降低到10.7μΩ·cm。溅射功率从3250W增加到7500W时,〈111〉晶面择优取向增强,Cu膜平均晶粒尺寸由15.1nm增加到17.6nm,电阻率从11.6μΩ·cm降低到7.4μΩ·cm。
Cu thin fihns were grown on PI （polyimide） flexible substrates by DC magnetron sputtering. The influence of the argon ion bombardment and sputtering power on the contact angle, preferred orientation, average grain size and resistivity of the thin fihn were characterized with contact angle tester, XRD, four-point probe method and other instruments. The result showed that the contact angle decreases with lengthening bombarding time, and the angle becomes smallest, ie., 45°, if bombarding for 3min but the contact angle will increas if the bombarding time is lengthened further. When the bombarding time is lengthened from lmin to 3min, the average grain size increases from 16.6nm to 22.9nm, and the resistivity decreases from 16.21μΩ·cm to 10.7μΩ·cm. If the sputtering power increases from 3250W to 7500W, the 〈111〉 crystal face tends to preferred orientation, and the average grain size increases from 15. 1nm to 17.6nm with resistivity decreased from 11.6μΩ·cm to 7.41μΩ·cm.
出处
《真空》
CAS
北大核心
2009年第2期15-18,共4页
Vacuum
关键词
磁控溅射
Cu薄膜
溅射功率
放电时间
择优取向
电阻率
magnetron sputtering
Cu thin film
sputtering power
discharging time
preferred orientation
resistivity
