摘要
采用对靶直流反应磁控溅射方法,在不同温度的Si(100)基片上制备了一系列的ZnO薄膜.利用X射线衍射仪和荧光分光分度计对ZnO薄膜的结构和发光性能进行了研究.结果表明:所有的ZnO薄膜都具有六角纤锌矿结构,且都表现出了(002)织构.随基片温度增加,ZnO薄膜结晶质量提高,其颗粒尺寸单调增加,并且薄膜应力状态发生改变,由压应力转变为拉应力.同时光致发光谱实验结果表明:室温沉积的ZnO薄膜出现了365 nm和389 nm的紫外双峰,并且出现了弱的蓝光发射带.随着基片温度升高到350℃,365 nm附近的紫外峰红移到373nm,并且强度增强,而389 nm处的紫外峰强度明显减弱.当基片温度增加到500℃时,373 nm的发光峰强度减弱并蓝移到366 nm处,蓝光带强度减弱并红移到430 nm^475 nm处,并且出现了396 nm的近紫峰.
A serious of ZnO films were prepared on the Si （100） substrate with various temperatures by using facing target direct current （DC） reacting magnetron sputtering system. The structure and photoluminescence （PL） spectrum of ZnO films were characterized by X-ray diffraction （XRD） and spectrofluorophotometer. The results indicated that all ZnO films formed wurtzite structure and exhibited （002） texture. With the increment of substrate temperature, the crystallizing quality of ZnO films was improved and the grain size increased monotonically. Meanwhile, the stress status of ZnO films changed from compress stress to tensile stress. In addition, PL spectrum showed that for ZnO films deposited on the Si （100） substrate at room temperatures, both a 365nm ultraviolet （UV） peak and a 389nm UV peak were observed, and a weak blue emission band was also found. With increasing the substrate temperature to 350℃, the 365 nm UV peak red-shifted to 373 nm and its intensity enhanced while the intensity of 389 nm UV peak diminished. As the substrate temperature elevated to 500℃, the 373 nm UV peak blue-shifted to 366 nm and its intensity decreased as the blue emission band red-shifted to 430 nm-475 nm and its intensity decreased. Besides, a 396 nm violet peak was found.
出处
《广西师范学院学报（自然科学版）》
2009年第1期58-62,共5页
Journal of Guangxi Teachers Education University(Natural Science Edition)
基金
山东省教育厅科技计划(J08LI13)
山东省优秀中青年科学家科研奖励基金(2008BS04036)
关键词
ZNO薄膜
磁控溅射
基片温度
结构
光致发光
ZnO thin film
magnetron sputtering
substrate temperature
structure
photoluminescence
