摘要
采用恒定驱动电流改变环境温度和恒定环境温度改变驱动电流两种方法分别对直径5mm封装的AlGaInP型红光和黄光LED,InGaN型绿光和蓝光LED,以及InGaN蓝光+荧光粉的白光LED的结温与其光谱特性进行了测量,得到了不同条件下LED结温与光谱特性的关系.结果表明;AlGaInP LED的峰值波长与结温有良好线性关系,InGaN LED的峰值波长则与结温没有明显对应关系;但白光LED发射光谱的白、蓝功率比与结温有良好线性关系;对AlGaInP LED及蓝光激发的白光LED,通过光谱特性测量可快速、准确地确定光源系统中各LED的结温继而预测光源系统的有效寿命.
The junction temperature and spectral charateristics of A1GaInP based on red,yellow and InGaN based on green, blue and white light-emmiting diodes （LEDs） were measured by using the temperature coefficients of the diode forwared voltage and thermal resistance methode. A linear relation between junction temperature and emission peak wavelength was found for AIGaInP based on red and yellow on LEI）s. For the InGaN-YAG white LED,the junction temperature is inversely proportional with the ratio of the total radiation power （W） to the blue radiation power （B） W/B. The experiment results reveal that spectral characteristics measurement method is a good approach for determining junction temperatures of AIGaInP based and phosphor-converted LEDs.
出处
《光子学报》
EI
CAS
CSCD
北大核心
2009年第5期1069-1073,共5页
Acta Photonica Sinica
基金
国家自然科学基金(60778025)资助
关键词
LED
结温
光谱特性
峰值波长
非接触
LED
Junction Tcmperature
Spectral characteristics
Peak wavelength
Non-contact
