摘要
用双射频共溅射和溅射后退火的方法在单晶Si(111)衬底上制备了SiC薄膜。利用X射线衍射仪(XRD)、扫描电镜(SEM)及原子力显微镜(AFM)分析了样品的物相组成、形貌和结构。研究发现,此种方法制备得到8H-SiC薄膜,在1.5～3Pa时增大工作压强有利于SiC薄膜退火之后结晶,同时薄膜沉积速率降低,使生长变致密,粗糙度减小,薄膜表面趋于平滑。对SiC薄膜进行850、1000、1150℃退火,结果表明,适当升高退火温度有利于提高薄膜的结晶质量和晶化程度,提高薄膜的致密度,降低薄膜中的缺陷密度。
The 8H-SiC thin films were prepared on Si （111） substrates by RF magnetron sput- tering, and then annealed in a vacuum annealing system. X-ray diffraction （XRD）, scanning electron microscopy （SEM） and atomic force microscopy （AFM） were employed to analyze the phase composition, structure and surface morphology of the as-deposited films and the annealed ones. The results show that increasing pressure in the range of 1.5 - 3 Pa is beneficial to the crystallization of SiC film after annealing, meanwhile the deposition rate of films is reduced, the films become more dense, and the surface roughness is reduced. The annealing were carried out for the SiC film samples in the temperature range of 850 - 1150℃. The experimental results indicate that the quality and crystallinity of films are apparently improved and the density of defects is decreased with increasing the annealing temperature.
出处
《微纳电子技术》
CAS
北大核心
2009年第5期292-295,共4页
Micronanoelectronic Technology
关键词
碳化硅薄膜
双靶共溅射
工作压强
退火
表面形貌
SiC thin films
dual targets sputtering
pressure
annealing
surface morghology
