摘要
采用UMC 0.6μm BiCMOS工艺设计了一款应用于LDO的高性能过温保护电路,该电路具有20℃的温度滞回区间,热关断点温度160℃、热开启点温度140℃,同时在输入电压2.5～6V范围内热关断点、开启点温度最大漂移不超过6℃,具有较高的精度,满足LDO宽输入电压范围的要求.
Using UMC 0. 6μm BiCMOS process designed a high-performance thermal-shutdown circuit, the hysteretic temperature range is 20 ℃ the turn-off point temperature is about 140 ℃ and the turn-on point temperature is about 140 ℃, at the same times, the maximum temperature drift of turn-on point and turn-off point does not exceed 6 ℃, so this circuit has higher precision which meets the wide scope of the requirements of LDO.
出处
《陕西科技大学学报（自然科学版）》
2009年第3期98-100,105,共4页
Journal of Shaanxi University of Science & Technology
基金
陕西科技大学2008校级自选科研项目(ZX08-23)
关键词
LDO
过温保护
BICMOS
low dropout linear regulator
thermal-shutdown
BiCMOS
