摘要
绝缘栅双极型晶体管(IGBT)在各种电力电子装置中已得到了广泛的应用,但是长期以来对于其内部参数的提取缺乏有效的手段,从而影响了其仿真模型的应用以及使用水平的提高。本文对IGBT栅极的传统平面结构和新型沟槽结构进行了比较,基于其工作机理与半导体物理方程进行了理论分析和公式推导,在分析现有方法不足的基础上提出了IGBT栅极各个参数提取的一些新方法,并且针对某一型号具体器件在不同工作条件下进行了提取实验,所得到的参数值都具有较好的一致性,同时也证明了该方法的准确性。
The insulated gate bipolar transistor has been extensively used in all kinds of power electronics devices, but for a long time, the absence of effective methods for its parameters extraction limited the employment of simulator models, which also restricted the development of device application level. This paper compares the planar gate structure with the trench gate structure of IGBT, and carries on theoretic analysis and formulary derivation based on its work principle and semiconductor physics. According to the flaws of existing ways, a series of new parameter extraction methods for gate parameters is proposed. The results of extraction experiments under different working condition show good consistency, which also proves the accuracy of proposed extraction methods.
出处
《电工技术学报》
EI
CSCD
北大核心
2009年第7期76-80,共5页
Transactions of China Electrotechnical Society
基金
国家自然科学基金重点项目(50737004)
创新研究群体科学基金(50721063)
国家自然科学基金(50607020)资助项目
关键词
IGBT
栅极
特性分析
参数提取
IGBT, gate, characteristic analysis, parameter extraction
