摘要
采用电子束蒸发法制备了单层TiO2薄膜,控制O2流量从10mL/min以步长10mL/min递增至50mL/min(标况下)。利用ZYGO干涉仪测量基片镀膜前后的面型变化;采用Stoney公式计算出残余应力,分析了不同O2压下残余应力的变化。在本实验条件下,TiO2薄膜的应力随O2的增大,张应力先增大后减小;随O2压继续增大,由张应力逐渐过渡到压应力;O2压过大时,压应力减小。因此,可以通过改变O2压来控制薄膜的应力。应力的变化与薄膜的微观结构密切相关,分析了所有样品的X射线衍射(XRD)谱发现,薄膜结构均为非晶态。
TiO2 films were prepared by electron beam evaporation on K9 glass. Oxygen flux was varied in the range of 10 mL/min to ,50 mL/min by the step of 10 mL/min （under standard condition）. The residual stress was measured by observing the substrate deflection with ZYGO interferometer. The results show that,as the oxygen pressure increases,the residual stresses of T iO2 films on both substrates are tensile and increase firstly,then decrease, gradually from tensile to compressive; as the oxygen pressure increases uheriorly, the residual stresses decrease gradually. The changes may be due to the variation of the microstructure of the TiO2 films, which is inspected with X-ray diffraction （XRD）. It is found that the microstructures of the films are amorphous.
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2009年第5期642-644,共3页
Journal of Optoelectronics·Laser
基金
山东省教育厅资助项目(J05C04)
关键词
TIO2薄膜
残余应力
O2分压
电子束蒸发
thin films
TiO2 films
residual stress
oxygen partial pressure
electron beam evaporation
