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外部FP-LD光注入下多模FP-LD的调制响应特性理论研究

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摘要 对FP半导体激光器(从FP-LD)在另一个FP半导体激光器(主FP-LD)的强光注入下,其调制响应特性进行了理论研究.研究结果表明:从FP-LD的调制响应特性与外部光注入强度、主从FP-LD之间的中心频率失谐以及模式间隔差等密切相关.随着主FP-LD注入强度的逐渐增加,从FP-LD的3dB调制带宽将增大;进一步地增大注入强度将导致弛豫振荡峰的前端已经降到3dB以下,从而使3dB调制带宽迅速减小.随着主从FP-LD之间的中心频率失谐量△f的逐渐增加,对于较小的光注入强度,3dB带宽呈现单调增加的趋势,直到FP-LD工作在单周期(P1)状态;对于较大的光注入强度,FP-LD注入锁定的频率失谐范围较大,在注入锁定范围内,可观察到随着失谐量△f的逐渐增加,FP-LD的3dB调制带宽先增大后减小.对于给定的光注入强度以及频率失谐量,FP-LD的3dB调制带宽随模式间隔差的分布存在两个极大值.通过合理地选择系统参数,可以使FP-LD的频率响应特性得到显著改善,其3dB调制带宽可达自由运转时的5.5倍.
出处 《科学通报》 EI CAS CSCD 北大核心 2009年第20期3069-3073,共5页 Chinese Science Bulletin
基金 重庆市自然科学基金(编号:CSTC-2007BB2333) 东南大学毫米波国家重点实验室开放基金(编号:K200805)资助项目
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参考文献30

  • 1Olshansky R, Hill P, Lanzisera V, et al. Frequency response of 1.3 μm InGaAsP high speed semiconductor lasers. IEEE J Quantum Electron, 1987, 23:1410--1418.
  • 2Petitbon I, Gallion P, Dutta N K. l.ocking bandwidth and relaxation oscillations of an injection-locked semiconductor lasers. IEEE J Quantum Electron, 1988, 24:148- 154.
  • 3Hui R, D'Ottavi A, Mecozzi A, et al. Injection locking in distributed feedback semiconductor lasers. IEEE J Quantum Electron, 1991, 27:1688- 1695.
  • 4Lowery A J, Novak D. Enhanced maximum intrinsic modulation bandwidth of complex-coupled DFB semiconductor lasers. Electron Lett, 1993, 29:461- 462.
  • 5Simpson T B, Liu J M. Bandwidth enhancement and broadband noise reduction in injection-locked semiconductor lasers. IEEE Photon Technol Lett, 1995, 7:709 -711.
  • 6Wang J, Haldar M K, Li L, et al. Enhancement of modulation bandwidth of laser diodes by injection locking. IEEE Photon Technol Lett, 1996, 8:34 -36.
  • 7Simpson T B, I,iu J M. Small-signal analysis of modulation characteristics in a semiconductor laser subject to strong optical injection.IEEE J Quantum Electron, 1996, 32: 1456--1468.
  • 8Liu J M, Chen H F, Meng X J, et al. Modulation bandwidth, noise, and stability of a semiconductor laser subject to strong injection locking. IEEE Photon Technol Lett, 1997, 9:1325- 1327.
  • 9Meng X J, Chau T, Wu M C. Experiment demonstration of modulation bandwidth enhancement in distributed feedback lasers with external light injection. Electron Lett, 1998, 34:2031--2032.
  • 10Murakami A, Kawashima K, Atsuki K. Cavity resonance shift and bandwidth enhancement in semiconductor lasers with strong light injection. IEEE J Quantum Electron, 2003, 39:1196--1204.

二级参考文献47

  • 1吴加贵,吴正茂,林晓东,张毅,钟东洲,夏光琼.双信道光混沌通信系统的理论模型及性能研究[J].物理学报,2005,54(9):4169-4175. 被引量:23
  • 2颜森林,汪胜前.激光混沌串联同步以及混沌中继器系统理论研究[J].物理学报,2006,55(4):1687-1695. 被引量:15
  • 3李孝峰,潘炜,马冬,罗斌,张伟利,熊悦.激光器自发辐射噪声对混沌光通信系统的影响[J].物理学报,2006,55(10):5094-5104. 被引量:24
  • 4王云才,张耕玮,王安帮,王冰洁,李艳丽,郭萍.光注入提高半导体激光器混沌载波发射机的带宽[J].物理学报,2007,56(8):4372-4377. 被引量:26
  • 5Wang J,Haldar M K,Li L,et al.Enhancement of modulation bandwidth of laser diodes by injection locking.IEEE Photonics Technol Lett,1996,8:34
  • 6Simpson T B,Liu J M,Gavrielides A.Small-signal analysis of modulation characteristics in a semiconductor laser subject to strong optical injection.IEEE J Quantum Electron,1996,32:1456
  • 7Simpson T B,Liu J M.Enhanced modulation bandwidth in injection-locked semiconductor lasers.IEEE Photonics Technol Lett,1997,9:1322
  • 8Meng X J,Chau T,Wu M C.Experimental demonstration of modulation bandwidth enhancement in distributed feedback lasers with external light injection.Electron Lett,1998,34(21):2031
  • 9Hwang S K,Liu J M,White J K.35-GHz intrinsic bandwidth for direct modulation in 1.3μm semiconductor lasers subject to strong injection locking.IEEE Photonics Technol Lett,2004,16:972
  • 10Lu H H,Huang H H,Tzeng S J,et al.Employing double external light injection techniques in radio-on-fiber transport systems.CLEO 2004,1:16

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