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一种新型高性能开关电流存储单元的设计 被引量：1

Novel Design of Switched-Current Memory Cell with High Performance
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摘要 利用一种新技术,在低压(1.8 V)条件下,设计了一种高性能的开关电流(SI)存储单元电路。该电路通过在基本存储单元基础上增加一个电压反转跟随器电路(FVF),从存储晶体管的输入端直接消除时钟馈通(CFT)误差电压,从而阻止了电流误差的产生,使得输出端的CFT误差电流降为原来的6%,并通过Hspice给出了仿真结果。结果表明所设计的电路方案正确有效。 A high performance switched-current memory cell is designed with low supply voltage （1.8 V）, using a new type of technology. It adds a FVF circuit based on the primary circuit, which can remove clock feedthrough voltage from the input port of the memory transisitor directly. As a result, the current error at the output is decreased to 6 %. Simulation results with Hspice are given. The result shows that the designed circuit is correct and effective.
作者 谈作伟 王卫东
机构地区 桂林电子科技大学信息与通信学院
出处 《电子器件》 CAS 2009年第6期1077-1079,1083,共4页 Chinese Journal of Electron Devices
基金 广西科学研究与技术开发计划项目资助(0731021)
关键词 SI存储单元 FVF 时钟馈通误差 HSPICE switched-current memory-cell FVF clock-feedthrough error Hspice
分类号 TN432 [电子电信—微电子学与固体电子学]
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参考文献9

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二级参考文献15

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共引文献12

同被引文献2

  • 1杜中华,王卫东.Class AB开关电流基本存储单元的误差分析及消除方法[J]科技信息(科学教研),2007(36).
  • 2SAN-UM W,SRISUCHINWONG B,TANTARATANA S.A low-power low-mismatchlow-glitch class AB first-generation switched-currentmemory cell and its applications. IEEE Region10 Conf . 2004

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电子器件
2009年 第6期

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