期刊文献+

碳化硅薄膜制备方法及光学性能的研究进展 被引量:6

RECENT PROGRESS OF THE OPTICAL PROPERTIES AND THE PREPARATION METHODS OF SiC THIN FILM
在线阅读 下载PDF
导出
摘要 碳化硅薄膜有密度小、热导率高、热膨胀系数低、硬度高等优异的性能。介绍了制备碳化硅薄膜的2种常用方法,即化学气相沉积和磁控溅射技术,比较了2种方法的各自优势。总结了碳化硅薄膜光学性能及短波发光特性的研究进展。 SiC thin film has many preferred properties, such as low density, high thermal conductivity, low thermal expansion coefficient, high hardness and so on. In this paper, the two most commonly used methods, chemical vapor deposition and magnetron sputtering technology, were reported. And their respective advantages on preparing SiC thin film were compared. The recent progress of studying on the optical properties and photoluminescence of SiC thin film were also mentioned in this paper.
出处 《真空与低温》 2009年第4期193-198,共6页 Vacuum and Cryogenics
基金 表面工程技术国家级重点实验室基金项目(914C540107090C54)资助
关键词 碳化硅薄膜 制备方法 化学气相沉积 磁控溅射 光学性能 SiC thin film preparation methods Chemical Vapor Deposition Magnetron Sputtering optical properties
  • 相关文献

参考文献46

  • 1HARRIS G L. Chapter 1 in Properties of Silicon Carbide [M]. INSPEC, Institution of Electrical Engineers, London, 1995.1-9.
  • 2OLLE KORDINA, STEPHEN E SADDOW. Chapter 1 in Advances in Silicon Carbide Processing and Applications [M]. Artech House, Inc. New York, 2001.1-29.
  • 3周继承,郑旭强,刘福.SiC薄膜材料与器件最新研究进展[J].材料导报,2007,21(3):112-114. 被引量:11
  • 4KOVATS Z, METZGER T H, STANGL J, et al. Investigation of β-SiC precipitation in Si1-yCy epilayers by x-ray scattering at grazing incidence [J]. Appl Phys Lett, 2000, 76(23): 3409-3411.
  • 5HIDEKI NAKAZAWA, MAKI SUEMITSU. Low-temperature formation of an interracial buffer layer using monomethylsilane for 3C SiC/Si(100) heteroepitaxy [J]. Appl Phys Lett, 2001, 79(6): 755-757.
  • 6CHEN J, A STECKL J, LOBODA M J. Molecular beam epitaxy growth of SiC on Si (111) from silacyclobutane [J]. J Vac Sci Technol B, 1998, 16(3):1305-1308.
  • 7TARO NISHIGUCHI, MITSUHIRO NAKAMURA, KOJI NISHIO, et al. Heteroepitaxial growth of (111) 3C□SiC on well-latticematched (110) Si substrates by chemical vapor deposition [J]. Appl Phys Lett, 2004, 84(16): 3082-3084.
  • 8GOLECKI I, REIDINGER F, MARTI J. Single-crystalline, epitaxial cubic SiC films grown on (100) Si at 750 ℃ by chemical vapor deposition[J]. Appl Phys Lett, 1992, 60(14): 1703-1705.
  • 9KALIUCHI H, OHMI H, YASUTAK E K. Formation of silicon carbide at low temperatures by chemical transport of silicon induced by atmospheric pressure H2/CH4 plasma[J]. Thin Solid Films, 2008, 516(19): 6580-6584.
  • 10BISHOP S M, C L REYNOLDS J, LILIRNTAL-WEBER Z, et al. Sublimation growth of an in-situ-deposited layer in SiC chemical vapor deposition on 4H-SiC(112-0) [J]. Journal of Crystal Growth, 2008, 311: 72-78.

二级参考文献117

共引文献67

同被引文献45

引证文献6

二级引证文献5

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部