摘要
采用SiO_2/CdSe构建了可见光波段一维光子晶体结构,并在其中引入LiTaO_3缺陷层。利用传输矩阵法,分析了电磁波在无缺陷与含LiTaO_3缺陷层两种光子晶体中的带隙结构,研究了缺陷层参量对光子晶体可见光波段带隙结构的影响规律。计算结果表明:LiTaO_3的引入,有利于带隙宽度的增加,调整缺陷层结构参量,缺陷模的位置可在不同颜色区域出现,如红光、黄光等缺陷模。该结构有望用于制作可见光波段的滤波器。
SiO2 and CdSe are used to construct one-dimensional photonic crystal in visible region,including the introduction of LiTaO3 defect layer. The formation of photonic band gaps is exhibited and confirmed by a calculation of the transfer matrix method （TMM）. There becomes defect modes in the photonic forbidden band gap compared with thephotonic crystals without defects. The position, amount and reflection properties of the defect modes are related with the form of defect and the thickness of defect and periodicity of photonic crystals. It is shown that the variety of the width of impure layer in one-dimensional photonic crystal and the periods number layers of photonic crystal can alter the transmission, the location and numbers of photonie defect mode. When the thickness of LiTaO3 inserts layer is regulated properly, for instance, the defect module can be appeared on red light, yellow light area of visible region. The structure should enable new applications for photonic crystal devices design.
出处
《光子学报》
EI
CAS
CSCD
北大核心
2010年第1期76-79,共4页
Acta Photonica Sinica
基金
国家自然科学基金(50874079)
山西省自然科学基金(200611053)资助
关键词
光子晶体
缺陷层
可见光波段
传输矩阵法
Photonic crystals
Defect mode
Visible region
Transfer matrix, method
