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基于Quasi-Yagi天线结构的波导-微带背靠背过渡

Waveguide-to-Microstrip Back-to-Back Transition Using Quasi-Yagi Antenna
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摘要 提出了一种新颖的波导-微带线的背靠背过渡结构,利用Quasi-Yagi天线结构在波导E面与波导形成电场耦合,通过采用高介电常数基片和增加Yagi天线引向器阶数的方法,改善天线与波导的电场耦合效果,以达到在通频带内平稳过渡,较传统的波导微带过渡结构有着更宽的带宽(将近68%)。通过电磁仿真软件CST在整个X波段对其进行了全波分析,得到了较好的S21(S21<0.7 dB)。对这种过渡结构进行了容差分析,在10%的误差范围内S21仍能保持较好的一致性和相对低的插入损耗,能满足加工要求。 A novel waveguide-microstrip back to back transition structure by utilizing Quasi-yagi Antenna is introducted in this paper. By adopting high dielectric substrate and adding numbers of the Yagi antenna director, electromagnetic coupling effect between antenna and waveguide is improved to make a smoother transition in passband. Compared with traditional waveguide-microstrip structure, it has a advantagment of wider bandwidth （nearly 68%）. Through electromagnetic software CST, a full-wave analysis in the whole X-band bring about better S21（S21〈0.7 dB）. The a toralance Analysis to this transition structure Shows that S21 still keeps fine consistency and comparatively low insert loss within deviation of 1 0%, which can meet the requirement of production.
作者 胡皓全 曹纪纲
机构地区 电子科技大学电子工程学院
出处 《电子科技大学学报》 EI CAS CSCD 北大核心 2010年第2期161-163,共3页 Journal of University of Electronic Science and Technology of China
基金 部级基金
关键词 背靠背结构 宽带 Quasi-Yagi天线 波导过渡 X波段 back-to-back broad-band Quasi-Yagi antenna waveguide transition X band
分类号 TN124.2 [电子电信—物理电子学]
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参考文献10

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电子科技大学学报
2010年 第2期

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