摘要
采用磁控溅射法在Si基底上制备了Zn1-xVxO系列薄膜样品,X射线衍射表明所有样品都具有纤锌矿结构,没有发现其他的衍射峰存在.研究发现,c轴晶格常数随着掺杂浓度的增加而增大.原子力显微镜测量表明样品中的颗粒分布均匀,没有发现团聚物.磁性测量表明,直接沉积的样品具有顺磁性,而经真空退火的所有样品都具有明显的室温铁磁性,且随着掺杂浓度的增加,样品的饱和磁化强度增加.
A series of V-doped ZnO films was prepared using the radio-frequency magnetron sputtering.No secondary phases and metal clusters were found in either sample.All of the Zn1-xVxO films were single phase and c-axis preferred orientation.The XRD results also indicated a monotonic increased in the lattice constant with increasing V concentration.AFM showed sample particle size distribution of uniform,did not find clusters.Magnetization measurement showed that all samples annealed in the vacuum had the room temperature ferromagnetism.The saturation magnetization increased as the V concentration increased in films.While the Zn0.95Ni0.05O thin films as grown only had paramagnetism.
出处
《河北师范大学学报（自然科学版）》
CAS
北大核心
2010年第3期296-299,共4页
Journal of Hebei Normal University：Natural Science
基金
河北省自然科学基金(E2005000178
E2007000280)
关键词
射频磁控溅射
室温铁磁性
氧空位
radio-frequency magnetron sputtering
room temperature ferromagnetism
oxygen vacancies
