摘要
本文采用 Sol- Gel法在 Pt/Ti/Si( 1 0 0 )衬底上制备了 Y掺杂半导化 Ba Ti O3的 PTC薄膜 ,前驱物为醋酸钡、钛酸四丁酯 ,溶剂体系选用乙二醇 -乙二醇甲醚 -甲醇 -水 ,添加乙酰丙酮作为螯合剂及聚乙二醇作为表面活性剂 .其 R- T特性转变温度约为 1 38℃ ,升阻比达 4个数量级 ,转变温区约 2℃ .
This paper reports the PTC effect of Y\|doped BaTiO 3 thin film on Pt/Ti/Si(100) substrates by using sol\|gel processes. We chose barium acetate and tetrabuyyl titanate as precursors. The solvent system is ethylene glycol\|methoxyethanol\|methanol\|water, appended acetylacetone as chelating agents and polyethylene glycol as surfactant. The R\|T characteristic of thin film is measured. The PTC resistivity ratio is over 10 4. The temperature of PTCR jump is about 138℃ and the temperature region is about 2℃.
