摘要
在钒溶胶中掺入适量聚钨酸溶胶,采用浸渍提拉法在载玻片上涂膜,涂片薄膜在氢气氛围中、在400℃温度下还原3 h,制得掺钨VO2薄膜。金相显微镜观察到薄膜呈VO2的特征绿色;X荧光光谱分析得出薄膜中W、V的含量分别为3.212%和64.97%。电阻-温度曲线测试表明,VO2薄膜的相变温度为40.5℃,热滞回线宽度为ΔT=11℃,电阻突变量ΔS达到4.06个数量级。
V2O5 film was first fabricated by dipping a glass slide into a V2O5 gel containing a small quantity of polytungstate sol.Then the V2O5 film was reduced in hydrogen atmosphere at 400 ℃ for 3 h and then a tungsten-doped VO2 thin film was prepared.The resulted film shows the characteristic green of VO2.the content of W and V is 3.212% and 64.97%,respectively.The results of the curve of resistance-temperature show that the phase transition temperature of the VO2 thin film is 40.5 ℃,the thermal hysteresis loop width is ΔT = 11 ℃,amount of resistance mutation（ΔS） is 4.06 orders of magnitude.
出处
《钢铁钒钛》
CAS
北大核心
2010年第2期6-9,共4页
Iron Steel Vanadium Titanium
基金
四川省教育厅重点科研项目(2006A167)
关键词
二氧化钒
薄膜
相变温度
掺钨
氢还原
vanadium dioxide
thin film
phase transition temperature
tungsten-doped
hydrogen reduction
