摘要
采用K·P微扰法建立了应变Si导带能谷由纵、横向有效质量表征的E-k关系,并在此基础上,研究分析了(001),(101),(111)晶面应变Si电子的电导有效质量与应力、能谷分裂能及晶向的关系.结果表明,弛豫Si1-xGex材料(001)面生长的应变Si沿[100],[010]晶向的电子电导有效质量和弛豫Si1-xGex材料(101)面生长的应变Si沿[010]晶向的电子电导有效质量随Ge组分(应力)的增加而减小,并逐渐趋于常数.以上结论可为应变SinMOS器件性能增强的研究及导电沟道晶向与应力设计提供理论依据.
Strained Si CMOS technology is one of the most advanced technologies in present day microelectronics. Electronical conductivity effective mass of strained Si is a key parameter to study electron mobility enhancement. Using K·P method with the help of perturbation theory,dispersion relation near conduction band valley was determined,including the longitudinal and transverse masses. And then,electronical conductivity effective masses of strained Si on （001）,（101） and （111） planes were obtained with respect to stress,splitting energy and directions. It was found that both the [100] and [010]directional electronical conductivity effective masses of strained Si /（001） Si1-x Gex and the [010]directional one of strained Si /（101）Si1-xGex decrease with increasing Ge fraction or stress,and both values tend to be constant. The results provide valuable reference to the conduction channel design related to stress and orientation in the strained Si nMOS devices.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2010年第9期6545-6548,共4页
Acta Physica Sinica
基金
国家部委项目(Nos.51308040203
9140A08060407DZ0103
6139801)资助的课题~~
关键词
应变SI
K·P法
电导有效质量
strained Si
K·P method
conductivity effective mass
