摘要
采用热丝化学气相沉积法,改变工作气压和偏流,在硅基片上沉积了高掺硼金刚石膜。利用扫描电镜(SEM)、拉曼光谱和X射线衍射仪对沉积的金刚石膜表面形貌和结构进行表征。结果显示:当气体压强从3kPa降低到1.5kPa时,金刚石膜有较平的表面形貌和和较好的晶形,薄膜的晶体性质得到良好的改善。但是继续降气体压强,从1.5kPa到0.5kPa时,却呈现出相反的趋势。固定气体压强(1.5kPa),改变偏流,结果表明:适当的偏流(3A)可以改善掺硼金刚石的质量,偏流较高会导致薄膜中非金刚石相增多。
Highly boron-doped diamond（BDD）films were deposited by hot filament chemical vapor deposition on a silicon substrate with different gas pressures and bias currents.The surface morphology and the structure of the diamond films were analyzed by scanning electron microscopy,Raman spectroscopy,and X-ray diffraction.Results indicated that the quality of the highly BDD films tended to be improved when the gas pressure decreased from 3 to 1.5kPa,whereas they showed an opposite trend with a further decrease of the gas pressure from 1.5 to 0.5 kPa.An appropriate bias current（3A）was favorable in improving the qualities of the diamond films and a higher bias current led to an increase of the non-diamond phase in the films.
出处
《新型炭材料》
SCIE
EI
CAS
CSCD
北大核心
2010年第5期357-362,共6页
New Carbon Materials
基金
supported by the 973 Program(Grant No.2008CB617614)~~
