摘要
对目前的两类图像传感器CCD和CMOS做了系统的分析和研究。对CMOS与CCD的结构特点,相关的性能参数进行了深入比较研究。针对CMOS图像传感器的低灵敏度、高噪声,暗电流,低填充度和成像质量差等技术问题,提出了DRSCAN噪声消除技术,CMOS C3D技术,片上模拟处理技术和彩色插值算法等解决途径。通过进一步对图像传感器的应用发展情况和发展趋势的分析与研究,得出:在未来发展中,由于CMOS图像传感器已经克服了已有的技术瓶颈,在视频监控,航空探测设备,医疗设备,眼膜识别,可视通信等诸多领域的应用前景将会优于CCD图像传感器。
Systematic analysis and research about current CCD and CMOS image sensors have been done. The structure characteristics and the relevant parameters of CCD （charge-coupled device） and CMOS （Comp lementaryM etal-Oxide Semiconductor） image sensors are comparativly studied in depth; lots of issues of CMOS image sensors, such as low-sensitivity, high noise, dark current and low filling degree have been resolved by new technologies like DRSCAN noise cancellation technology, CMOS C3D technology, on-chip analog processing technology and color interpolation algorithms. Through further analysis and research about the developments and trends of international image sensors, conclusion is drawed that：in the future, existing bottlenecks are resolved, CMOS will be better than CCD image sensor in many fields, such as in video surveillance, aviation and detection equipment, medical equipment, eye mask recognition and visual
出处
《电子设计工程》
2010年第11期178-181,共4页
Electronic Design Engineering
