摘要
基于分段线性补偿原理,提出了一种新的带隙基准源高阶曲率补偿方法,使电压基准源的温度特性曲线在整个工作温度范围内具有多个极值,显著提高了电压基准源的精度。采用0.5μm CMOS工艺模型进行仿真。结果表明,在-40℃～135℃的温度范围内,电压基准源的温度系数为5.8×10-7/℃。设计了具有提高电源抑制比功能的误差放大器,在5 V电源电压下,电压基准源的电源抑制比在低频时-为95.4 dB,在1 kHz时为-92.4 dB。
Based on the principle of piecewise compensation,a novel higher-order curvature compensation method for bandgap reference was presented.This method focused on forming multiple local extrema of reference voltage curve in the entire operating temperature range,which significantly improves the temperature independence.Results from simulation based on 0.5 μm CMOS process showed that the circuit had a temperature coefficient of 5.8×10-7 / ℃ in the temperature range from-40 ℃ to 135 ℃.By using an error amplifier with improved PSRR,the reference source,which operated at 5 V supply power,had a PSRR of-95.4 dB and-92.4 dB at dc and 1 kHz,respectively.
出处
《微电子学》
CAS
CSCD
北大核心
2011年第1期57-60,共4页
Microelectronics
基金
国家教育部博士点基金资助项目(200806141100)
