摘要
完成了对AlGaN/GaN高电子迁移率晶体管(HEMT)的结构设计及器件物理特性的验证等工作。使用TCAD软件完成了该器件直流特性及微波特性等性能的模拟。建立该器件的极化效应模型是本项研究的重点。完成了对异质结条件下诸多模型参数的筛选及修正,得到了符合理论的模拟结果。器件特性的验证与优化基于势垒层厚度h的变化展开,研究结果显示:漏极电流随h值的增加而增加,当h值超过40nm时,因二维电子气浓度上升缓慢而使漏极电流趋于饱和;跨导随h值的减小而增大,h每降低10nm,跨导约增大37mS/mm;势垒层厚度对高频特性的影响较小。
The structure design of AlGaN/GaN high electron mobility transistors（HEMTs） and verification of the device physical characteristics were completed.The simulations of the DC cha-racteristics and microwave properties were finished by TCAD software.The main point of the research is to establish the polarization effect model of the device.The choice and modification of many model parameters for heterojunction structures were completed.The simulation result is consistent with the theoretical value.The verification and optimization of the device characteristics were developed based on the change of the barrier thickness value h.The results show that the drain current increases with the increase of h,and when h exceeds 40 nm,the drain current trends to saturate for the slow concentration increase of the two-dimensional electron gas（2DEG）.The transconductance increases with the decrease of h,and the transconductance increases about 37 mS/mm for every 10 nm decrease in h value.The barrier thickness has only slight effect on the high frequency characteristics.
出处
《微纳电子技术》
CAS
北大核心
2011年第3期150-154,193,共6页
Micronanoelectronic Technology
基金
国家自然科学基金资助项目(10774090)
